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Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMINATE CONTAINING SAME
Document Type and Number:
WIPO Patent Application WO/2013/022123
Kind Code:
A1
Abstract:
This semiconductor light-emitting element is provided with: a group 13 element nitride film (3) grown on a seed crystal substrate in a nitrogen-containing atmosphere from a melt containing a flux and a group 13 element by a flux method; an n-type semiconductor layer (21) disposed on the group 13 element nitride film (3); a light-emitting region (23) disposed on the n-type semiconductor layer; and a p-type semiconductor layer (25) which is disposed on the light-emitting region. The semiconductor light-emitting element contains: an inclusion-distributed layer (3a), in which an inclusion derived from the components of the melt is distributed, disposed in a region that is 50 μm or less from an interface (11a) on the seed crystal semiconductor side of the group 13 element nitride film (3); and an inclusion-deficient layer (2b), which is deficient in inclusion, disposed on the inclusion-distributed layer.

Inventors:
IWAI MAKOTO (JP)
HIRAO TAKAYUKI (JP)
YOSHINO TAKASHI (JP)
Application Number:
PCT/JP2012/070782
Publication Date:
February 14, 2013
Filing Date:
August 09, 2012
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
IWAI MAKOTO (JP)
HIRAO TAKAYUKI (JP)
YOSHINO TAKASHI (JP)
International Classes:
H01L33/32; C30B9/00; C30B29/38
Domestic Patent References:
WO2005111278A12005-11-24
WO2010084675A12010-07-29
WO2009047894A12009-04-16
Foreign References:
JP2005247615A2005-09-15
JP2004224600A2004-08-12
JP2006008416A2006-01-12
JP2006036622A2006-02-09
JP2010052967A2010-03-11
Attorney, Agent or Firm:
HOSODA, Masutoshi et al. (JP)
Masunori Hosoda (JP)
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Claims: