Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2019/044173
Kind Code:
A1
Abstract:
A semiconductor light-emitting element according to one embodiment has a light emission peak wavelength of 380nm to 425nm. The semiconductor light-emitting element has a layered structure which includes a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. A surface of the substrate on the semiconductor layer side has a relief structure. The semiconductor layer has a buffer layer made of aluminum nitride with a thickness of 10 nm to 100 nm. The buffer layer is characterized by containing oxygen and satisfying 0.01 ≤ O8nm/O3nm
≤ 0.5 where O3nm (at%) is the oxygen concentration at a depth of 3 nm in the buffer layer and O8nm (at%) is the oxygen concentration at a depth of 8 nm.
Inventors:
HIRAMATSU RYOSUKE (JP)
SASAKI ATSUYA (JP)
HIRABAYASHI HIDEAKI (JP)
KAMIYAMA SATOSHI (JP)
SASAKI ATSUYA (JP)
HIRABAYASHI HIDEAKI (JP)
KAMIYAMA SATOSHI (JP)
Application Number:
PCT/JP2018/025731
Publication Date:
March 07, 2019
Filing Date:
July 06, 2018
Export Citation:
Assignee:
TOSHIBA MATERIALS CO LTD (JP)
UNIV MEIJO (JP)
UNIV MEIJO (JP)
International Classes:
H01L33/22; H01L21/205; H01L33/12
Domestic Patent References:
| WO2011108422A1 | 2011-09-09 |
Foreign References:
| JP2017506434A | 2017-03-02 | |||
| JP2014022447A | 2014-02-03 | |||
| JP2006324512A | 2006-11-30 | |||
| US20160254411A1 | 2016-09-01 |
Attorney, Agent or Firm:
HYUGAJI, Masahiko et al. (JP)
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