SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP

WIPO Patent Application WO/2010/073539

A1

A semiconductor light emitting element (1) is provided with: a substrate (101); a multilayer semiconductor layer (20) formed on the substrate (101) and including a light emitting layer; a first electrode (111) formed on an upper surface (106c) of the multilayer semiconductor layer (20); and a second electrode (108) formed on a partially cut away exposed surface (104c) of the multilayer semiconductor layer (20).  The first electrode (111) is provided with: a transparent electrode (109) having a hole section (109a) from which the upper surface (106c) of the multilayer semiconductor layer (20) is exposed; a bonding layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole section (109a); and a bonding pad electrode (120) formed so as to cover the bonding layer (110).

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OKABE, Takehiko (5-1 Yawata Kaigan dori, Ichihara-sh, Chiba 67, 〒2900067, JP)
岡部健彦 (〒67 千葉県市原市八幡海岸通５番の１　昭和電工株式会社内 Chiba, 〒2900067, JP)
HIRAIWA, Daisuke (5-1 Yawata Kaigan dori, Ichihara-sh, Chiba 67, 〒2900067, JP)

JP2009/006886

July 01, 2010

December 15, 2009

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SHOWA DENKO K.K. (13-9, Shibadaimon 1-chome Minato-k, Tokyo 18, 〒1058518, JP)
昭和電工株式会社 (〒18 東京都港区芝大門一丁目１３番９号 Tokyo, 〒1058518, JP)
OKABE, Takehiko (5-1 Yawata Kaigan dori, Ichihara-sh, Chiba 67, 〒2900067, JP)
岡部健彦 (〒67 千葉県市原市八幡海岸通５番の１　昭和電工株式会社内 Chiba, 〒2900067, JP)

H01L33/36

SHIGA, Masatake et al. (1-9-2, Marunouchi Chiyoda-ku, Tokyo 20, 〒1006620, JP)

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