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Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP
Document Type and Number:
WIPO Patent Application WO/2010/073539
Kind Code:
A1
Abstract:
A semiconductor light emitting element (1) is provided with: a substrate (101); a multilayer semiconductor layer (20) formed on the substrate (101) and including a light emitting layer; a first electrode (111) formed on an upper surface (106c) of the multilayer semiconductor layer (20); and a second electrode (108) formed on a partially cut away exposed surface (104c) of the multilayer semiconductor layer (20).  The first electrode (111) is provided with: a transparent electrode (109) having a hole section (109a) from which the upper surface (106c) of the multilayer semiconductor layer (20) is exposed; a bonding layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole section (109a); and a bonding pad electrode (120) formed so as to cover the bonding layer (110).

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Inventors:
OKABE TAKEHIKO (JP)
HIRAIWA DAISUKE (JP)
OHBA REMI (JP)
Application Number:
PCT/JP2009/006886
Publication Date:
July 01, 2010
Filing Date:
December 15, 2009
Export Citation:
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Assignee:
SHOWA DENKO KK (JP)
OKABE TAKEHIKO (JP)
HIRAIWA DAISUKE (JP)
OHBA REMI (JP)
International Classes:
H01L33/36
Foreign References:
JP2005011857A2005-01-13
JPH10242518A1998-09-11
JP2006013034A2006-01-12
JP2006173506A2006-06-29
JP2004186543A2004-07-02
JP2003101071A2003-04-04
JPH10242516A1998-09-11
Attorney, Agent or Firm:
SHIGA, Masatake et al. (JP)
Masatake Shiga (JP)
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