Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/081947
Kind Code:
A1
Abstract:
The semiconductor light-emitting element according to one embodiment of the present technique is provided with a nitride-based first light-emitting layer. The first light-emitting layer has an InaGa1-aN layer (a ≥ 0), and has, in the InaGa1-aN layer, a plurality of first insular regions comprising InbGa1-bN (b > a).
Inventors:
ISOBE YUUKI (JP)
KAWANISHI HIDEKAZU (JP)
KAWANISHI HIDEKAZU (JP)
Application Number:
PCT/JP2016/078209
Publication Date:
May 18, 2017
Filing Date:
September 26, 2016
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01S5/343; C23C16/34; H01L21/205
Domestic Patent References:
| WO2011101929A1 | 2011-08-25 |
Foreign References:
| JP2003289156A | 2003-10-10 | |||
| JP2010141242A | 2010-06-24 | |||
| JP2009054616A | 2009-03-12 | |||
| JP2007200933A | 2007-08-09 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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