Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/062305
Kind Code:
A1
Abstract:
A semiconductor light-emitting element 10, provided with a light extraction layer (substrate 22) having a light extraction surface (main surface 22b). The light extraction layer has a plurality of cone-shaped parts 52 formed in an array shape on the light extraction surface, and a plurality of granular parts 56 formed on both the side surface sections of the cone-shaped parts 52 and flat parts located in valleys between adjacent cone-shaped parts 52. A method for manufacturing a semiconductor light-emitting element 10, provided with a step for forming a mask having an array-shaped pattern on a light extraction surface, and a step for etching the light extraction layer and a mask from above the mask. The step for etching includes a first dry-etching step for performing dry-etching until all of the mask is removed, and a second dry-etching step for further dry-etching the light extraction layer after the mask has been removed.
Inventors:
NIWA NORITAKA (JP)
INAZU TETSUHIKO (JP)
SUZAKI YASUMASA (JP)
NAWATA AKIFUMI (JP)
TANAKA SATORU (JP)
INAZU TETSUHIKO (JP)
SUZAKI YASUMASA (JP)
NAWATA AKIFUMI (JP)
TANAKA SATORU (JP)
Application Number:
JP2017/035022
Publication Date:
April 05, 2018
Filing Date:
September 27, 2017
Export Citation:
Assignee:
NIKKISO CO LTD (JP)
SCIVAX CORP (JP)
SCIVAX CORP (JP)
International Classes:
H01L33/22; H01L21/3065; H01L33/32
Domestic Patent References:
| WO2015016150A1 | 2015-02-05 |
Foreign References:
| JP2010074008A | 2010-04-02 | |||
| JP2007123446A | 2007-05-17 | |||
| JP2008060286A | 2008-03-13 | |||
| JP2012124257A | 2012-06-28 | |||
| US20150014702A1 | 2015-01-15 |
Other References:
See also references of EP 3522239A4
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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