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Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/093013
Kind Code:
A1
Abstract:
This semiconductor light emitting element 10 is provided with: an n-type cladding layer 24 of an n-type aluminum gallium nitride (AlGaN) semiconductor material; an active layer 26 of an AlGaN semiconductor material, which is provided on a first upper surface 24a of the n-type cladding layer 24; and an n-side electrode 32 which is provided on a second upper surface 24b of the n-type cladding layer 24, said second upper surface 24b being adjacent to the first upper surface 24a. The n-side electrode 32 is provided with: a first metal layer 32a which is on the second upper surface 24b and contains titanium (Ti); and a second metal layer 32b which is on the first metal layer 32a and contains aluminum (Al). The upper surface of the second metal layer 32b has a root mean square roughness (Rq) of 5 nm or less.

Inventors:
SAKAI HARUHITO (JP)
NIWA NORITAKA (JP)
INAZU TETSUHIKO (JP)
Application Number:
PCT/JP2018/036565
Publication Date:
May 16, 2019
Filing Date:
September 28, 2018
Export Citation:
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Assignee:
NIKKISO CO LTD (JP)
International Classes:
H01L33/40; H01L21/28; H01L33/32
Domestic Patent References:
WO2013046419A12013-04-04
Foreign References:
JP2012227494A2012-11-15
JP2004258219A2004-09-16
JP2015103768A2015-06-04
JPH09129930A1997-05-16
US20170098739A12017-04-06
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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