Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/210676
Kind Code:
A1
Abstract:
A semiconductor light-emitting element (1) comprises an active layer (30), a P-type cladding layer (40), a contact layer (50), and an insulation film (60). A ridge (R) is formed in a region including the P-type cladding layer (40) and the contact layer (50). The ridge (R) includes a lower ridge (Rd) that includes the P-type cladding layer (40) and an upper ridge (Ru) that is disposed on the top surface (Rdt) of the lower ridge (Rd) and that includes the contact layer (50). The top surface (Rdt) of the lower ridge (Rd) is positioned between the bottom surface (Rub) of the upper ridge (Ru) and a side surface (Rds) of the lower ridge (Rd), and has a flat part (Rdf). The width of the bottom surface (Rub) of the upper ridge (Ru) is less than the width of the top surface (Rdt) of the lower ridge (Rd) and the width of the lower ridge (Rd) at the center position in the lamination direction. The insulation film (60) continuously covers an area from the side surface (Rds) of the lower ridge (Rd) to part of the top surface (Rut) of the upper ridge (Ru).
Inventors:
YAMADA ATSUSHI
KUNOH YASUMITSU
NAGAI HIROKI
NAKATANI TOGO
YUMOTO TAKASHI
KUNOH YASUMITSU
NAGAI HIROKI
NAKATANI TOGO
YUMOTO TAKASHI
Application Number:
PCT/JP2023/016403
Publication Date:
November 02, 2023
Filing Date:
April 26, 2023
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
International Classes:
H01S5/22; H01S5/343
Domestic Patent References:
| WO2022064626A1 | 2022-03-31 |
Foreign References:
| JP2003133644A | 2003-05-09 | |||
| JP2013025208A | 2013-02-04 | |||
| JP2006073818A | 2006-03-16 | |||
| JP2008182177A | 2008-08-07 | |||
| US20130287054A1 | 2013-10-31 | |||
| JP2022080571A | 2022-05-30 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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