Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PREPARATION METHOD THEREFOR, AND LED CHIP
Document Type and Number:
WIPO Patent Application WO/2023/123756
Kind Code:
A1
Abstract:
The present invention relates to the field of semiconductor manufacturing, and in particular to a semiconductor light-emitting element and a preparation method therefor, and an LED chip. The semiconductor light-emitting element comprises a patterned substrate, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer; the side walls of the P-type semiconductor layer, the light-emitting layer, and part of the N-type semiconductor layer form a first side wall; the side wall of the N-type semiconductor layer except the first side wall is a second side wall; a step surface of a patterned structure exposed between the second side wall and the patterned substrate is a first step surface; and the side wall of the patterned substrate is a third side wall. By arranging the multi-layer side wall structure, the light emitting efficiency of the semiconductor light-emitting element can be improved.
Inventors:
ZHAO YANG (CN)
SONG LINQING (CN)
LIAO HAN-CHUNG (CN)
LU LING (CN)
SONG LINQING (CN)
LIAO HAN-CHUNG (CN)
LU LING (CN)
Application Number:
PCT/CN2022/087897
Publication Date:
July 06, 2023
Filing Date:
April 20, 2022
Export Citation:
Assignee:
HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTD (CN)
International Classes:
H01L33/00; H01L33/24; H01L33/20
Foreign References:
| CN114335281A | 2022-04-12 | |||
| CN103094444A | 2013-05-08 | |||
| CN102782884A | 2012-11-14 | |||
| CN101834251A | 2010-09-15 | |||
| CN210245532U | 2020-04-03 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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