SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR

Title:

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2013/115614

Kind Code:

A1

Abstract:

Disclosed are a semiconductor light-emitting element and a production method therefor. The semiconductor light-emitting element comprises: a substrate; a first GaN layer formed on the substrate; an active layer formed on the first GaN layer; and a second GaN layer formed on the active layer. The first GaN layer comprises etching pits, wherein the etching pits have spherical nanoparticles formed therein.

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Inventors:

KIM YE SEUL (KR)
YOON YEO JIN (KR)
KIM KYOUNG WAN (KR)
SUH DUK IL (KR)
KIM TAE KYOON (KR)

Application Number:

PCT/KR2013/000862

Publication Date:

August 08, 2013

Filing Date:

February 04, 2013

Export Citation:

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Assignee:

SEOUL OPTO DEVICE CO LTD (KR)

International Classes:

H01L33/22; H01L33/30

Foreign References:

KR20100085635A	2010-07-29
JP2011216549A	2011-10-27
KR20070081934A	2007-08-20
KR20070065080A	2007-06-22
US20050051766A1	2005-03-10

Attorney, Agent or Firm:

MAPS Intellectual Property Law Firm (KR)
특허법인 엠에이피에스 (KR)

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