Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2019/124497
Kind Code:
A1
Abstract:
Provided is a junction semiconductor light-emitting element that experiences little change in light emission output and forward voltage over time, has excellent reliability, and has a center light emission wavelength of 1,000–2,200 nm. This semiconductor light-emitting element 100 has: a conductive support substrate 80; a metal layer 60 that is provided upon the conductive support substrate 10 and includes a reflective metal; a semiconductor laminate 30 that is provided upon the metal reflection layer 60 and is formed by laminating a plurality of InGaAsP group III-V compound semiconductor layers that include at least In and P; an n-type InGaAs contact layer 20A that is provided upon the semiconductor laminate 30; and an n-side electrode 93 that is provided upon the n-type InGaAs contact layer 20A. The center light emission wavelength of light that is emitted from the semiconductor laminate 30 is 1,000–2,200 nm.
Inventors:
YAMAMOTO JUMPEI (JP)
IKUTA TETSUYA (JP)
IKUTA TETSUYA (JP)
Application Number:
PCT/JP2018/047001
Publication Date:
June 27, 2019
Filing Date:
December 20, 2018
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
H01L33/10; H01L21/28; H01L29/41; H01L33/30; H01L33/40
Foreign References:
| JPH04249384A | 1992-09-04 | |||
| JP2011165800A | 2011-08-25 | |||
| JP2000068597A | 2000-03-03 | |||
| JPH09181398A | 1997-07-11 | |||
| JPH05190970A | 1993-07-30 | |||
| JPH07111339A | 1995-04-25 | |||
| JPH023293A | 1990-01-08 | |||
| US20100329297A1 | 2010-12-30 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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