SEMICONDUCTOR LIGHT-EMITTING ELEMENT SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT SUBSTRATE

WIPO Patent Application WO/2017/126569

A1

Provided are a semiconductor light-emitting element substrate which makes it possible to decrease the crystal dislocation density of a crystal in a light-emitting layer, and a method for manufacturing a semiconductor light-emitting element substrate. The semiconductor light-emitting element substrate is provided with: a reference surface which includes a flat surface parallel to a crystal plane of the material of the semiconductor light-emitting element substrate; and a plurality of protrusions which protrude from the reference surface, the protrusions being arranged on a two-dimensional lattice along the crystal plane and including a flat surface parallel with the crystal plane as a distal face. In a plane including the reference surface, mutually adjacent protrusions have a pitch P of not less than 100 nm and not more than 5.0μm, wherein 0.76 ≤ S1/S2 ≤ 7.42 is satisfied, where S1 is a first area which is the total area of the distal faces per unit area as viewed in plan opposing the reference surface, and S2 is a second area which is the total area of the reference surface per unit area.

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DAI KOTARO (JP)
SHINOTSUKA KEI (JP)
HATTA YOSHIHISA (JP)

PCT/JP2017/001601

July 27, 2017

January 18, 2017

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OJI HOLDINGS CORP (JP)

H01L33/22; C30B25/04; H01L21/203; H01L21/205

WO2011105557A1

2011-09-01

JP2012244091A	2012-12-10
JP2014175601A	2014-09-22
JP2011238884A	2011-11-24
JP2002280611A	2002-09-27
JP2003318441A	2003-11-07
JP2012248874A	2012-12-13

See also references of EP 3407394A4

ONDA, Makoto et al. (JP)

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