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Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/017303
Kind Code:
A1
Abstract:
This semiconductor light emitting element is characterized in being provided with: an In(XO)Ga(1-XO)N (0.25≤X0≤0.35) template; and a quantum well active layer that contains, as a well layer, Al(X2)In(Y2)Ga(1-X2-Y2)N (0≤X2≤1, 0≤Y2≤1).

Inventors:
KOTANI TERUHISA
Application Number:
PCT/JP2013/068938
Publication Date:
January 30, 2014
Filing Date:
July 11, 2013
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Assignee:
SHARP KK (JP)
International Classes:
H01L33/32; H01S5/323
Domestic Patent References:
WO2011022724A12011-02-24
Foreign References:
JP2000058920A2000-02-25
JP2009246005A2009-10-22
JP2011205076A2011-10-13
JPH02229475A1990-09-12
JPH10117016A1998-05-06
JP2010056434A2010-03-11
JP2003069156A2003-03-07
JPH11261108A1999-09-24
Attorney, Agent or Firm:
YONETSU, Kiyoshi et al. (JP)
Kiyoshi Yonezu (JP)
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