Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/191590
Kind Code:
A1
Abstract:
A semiconductor light-emitting element, comprising a semiconductor light-emitting sequence, the semiconductor light-emitting sequence comprising a first-type conductive semiconductor layer, a second-type conductive semiconductor layer and a light-emitting layer therebetween; a first electrode electrically connected to the first-type conductive semiconductor layer, and a second electrode electrically connected to the second-type conductive semiconductor layer; the first-type conductive semiconductor layer comprising an aluminum-gallium-indium-phosphide window layer, and the aluminum-gallium-indium-phosphide window layer being used as an ohmic contact layer for contacting the first electrode with the first-type conductive semiconductor layer. By selecting, on first electrode side of the first conductive type semiconductor layer side, aluminum-gallium-indium-phosphide as the ohmic contact layer and the window layer to replace the conventional light absorbing ohmic contact material, the light transmittance can be improved effectively.
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Inventors:
LI HUIWEN (CN)
ZHANG DONGYAN (CN)
PAN KUANFU (CN)
HUANG SHAOHUA (CN)
WANG DUXIANG (CN)
ZHANG DONGYAN (CN)
PAN KUANFU (CN)
HUANG SHAOHUA (CN)
WANG DUXIANG (CN)
Application Number:
PCT/CN2019/079571
Publication Date:
October 01, 2020
Filing Date:
March 25, 2019
Export Citation:
Assignee:
QUANZHOU SANAN SEMICONDUCTOR TECH CO LTD (CN)
International Classes:
H01L33/14
Foreign References:
| CN104952993A | 2015-09-30 | |||
| CN104952993A | 2015-09-30 | |||
| CN108417677A | 2018-08-17 | |||
| CN104934510A | 2015-09-23 | |||
| JP2001068730A | 2001-03-16 |
Other References:
See also references of EP 3951894A4
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