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Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/000474
Kind Code:
A1
Abstract:
Provided is a semiconductor light-emitting element, comprising: a semiconductor epitaxial stack, which has a first surface and a second surface opposite to the first surface, and which comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer located between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode and a second electrode, which are located on the first surface of the semiconductor epitaxial stack and are electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively; and an insulating layer, which is located between the first electrode and the semiconductor epitaxial stack and between the second electrode and the semiconductor epitaxial stack. The semiconductor light-emitting element is characterized in further comprising an anti-ejector-pin buffer layer which is located between the insulating layer and the second conductive type semiconductor layer. According to the present invention, the design of the anti-ejector-pin buffer layer is achieved, which can prevent the ejection of an ejector pin from damaging the semiconductor light-emitting element during a packaging process, effectively protect the semiconductor light-emitting element, and increase the product yield of the semiconductor light-emitting element.

Inventors:
LIN KUNTE (CN)
QIU JIANSHENG (CN)
Application Number:
PCT/CN2020/100151
Publication Date:
January 06, 2022
Filing Date:
July 03, 2020
Export Citation:
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Assignee:
TIANJIN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/00; H01L33/48; H01L33/60; H01L33/62
Domestic Patent References:
WO2013134073A12013-09-12
Foreign References:
CN109216515A2019-01-15
CN107808917A2018-03-16
CN210535686U2020-05-15
CN204315621U2015-05-06
CN109545940A2019-03-29
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