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Title:
SEMICONDUCTOR LIGHT SENSITIVE CELL AND SEMICONDUCTOR LIGHT SENSITIVE CELL ARRAY
Document Type and Number:
WIPO Patent Application WO/2015/154657
Kind Code:
A1
Abstract:
A semiconductor light sensitive cell and a semiconductor light sensitive cell array include a floating gate transistor, a gated MOS transistor and a light sensitive diode disposed in a semiconductor substrate. The anode or cathode of the light sensitive diode is connected with the floating gate of the floating gate transistor through the gated MOS transistor, and the corresponding cathode or anode of the light sensitive diode is connected with the drain of the floating gate transistor or connected to an external electrode. After the gated MOS transistor is switched on, the floating gate is charged or discharged through the light sensitive diode; and after the gated MOS transistor is switched off, the charges are stored in the floating gate of the floating gate transistor. The semiconductor light sensitive cell has the advantages of a small cell area, a low surface noise, a long floating gate charge storage time, a large operating voltage dynamic range and the like.

Inventors:
LIU WEI (CN)
LIU LEI (CN)
WANG PENGFEI (CN)
Application Number:
PCT/CN2015/076030
Publication Date:
October 15, 2015
Filing Date:
April 08, 2015
Export Citation:
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Assignee:
SU ZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L27/146
Foreign References:
CN104157658A2014-11-19
CN101707202A2010-05-12
JP2003333431A2003-11-21
CN1684261A2005-10-19
CN101237531A2008-08-06
CN103594477A2014-02-19
US7091531B22006-08-15
Attorney, Agent or Firm:
NANJING JINGWEI PATENT & TRADEMARK AGENCY CO., LTD (CN)
南京经纬专利商标代理有限公司 (CN)
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