SEMICONDUCTOR LIGHT SOURCE WITH EPITAXIALLY BURIED SELF-ALIGNED ELECTRICAL AND OPTICAL CONFINEMENT

Title:

SEMICONDUCTOR LIGHT SOURCE WITH EPITAXIALLY BURIED SELF-ALIGNED ELECTRICAL AND OPTICAL CONFINEMENT

Document Type and Number:

WIPO Patent Application WO/2018/208274

Kind Code:

A8

Abstract:

This invention is a method of producing a surface emitting semiconductor light source, wherein the lateral dimensions can be determined by a lithographic process using epitaxially buried structures, providing electrical and optical confinements.

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Inventors:

DEMİR ABDULLAH (TR)

Application Number:

PCT/TR2017/050728

Publication Date:

August 01, 2019

Filing Date:

December 29, 2017

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Assignee:

DEMIR ABDULLAH (TR)

International Classes:

H01S5/183

Attorney, Agent or Firm:

SEVİNÇ, Cenk (TR)

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