Title:
SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/116418
Kind Code:
A1
Abstract:
The objective of the present invention is to provide a semiconductor manufacturing device and semiconductor manufacturing method with which it is possible to calculate accurately a thickness at the surface of an object of which the thickness is to be measured, including a case in which a wafer or an object of which the thickness is to be measured, formed on the surface of the wafer, has a step formed on the surface thereof. This semiconductor manufacturing device is provided with a thickness calculating function 100. The thickness calculating function 100 is provided with: a measured value acquiring unit 1 which acquires a plurality of measured values at different measuring positions of the wafer, from a thickness measuring function 50 which measures the thickness of the wafer; a histogram data creating unit 2 which creates histogram data on the basis of the plurality of measured values; and a class group extracting unit 3 which extracts a class group from the histogram data, where the class group is a continuous class having a frequency at least equal to a pre-determined frequency. The semiconductor manufacturing device is additionally provided with a representative value calculating unit 4 which calculates a representative value of the thickness of a measured region on the basis of the classes included in the extracted class group.
Inventors:
TANAKA HIROSHI (JP)
Application Number:
PCT/JP2016/088158
Publication Date:
June 28, 2018
Filing Date:
December 21, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/66
Foreign References:
| JP2002261139A | 2002-09-13 | |||
| JP2006142737A | 2006-06-08 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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