SEMICONDUCTOR MANUFACTURING METHOD AND DEVICE THEREFOR

WIPO Patent Application WO/2018/107375

A1

Disclosed are a semiconductor manufacturing method and a device therefor, which are used for manufacturing a tunnelling field-effect transistor. The method in the embodiments of the present invention comprises: determining a position of a first pole on a surface of the tunnelling field-effect transistor substrate by using a photolithography technology, wherein the first pole is a source or a drain; manufacturing a spindle structure at the position of the first pole, wherein the spindle structure comprises a polysilicon layer and a nitride layer, and the polysilicon layer is in contact with the surface of the tunnelling field-effect transistor substrate; manufacturing a nitride sidewall of the polysilicon layer, so that the surface of the polysilicon layer is sealed on the surface of the tunnelling field-effect transistor substrate, the nitride sidewall and the nitride layer; and determining a region, other than the spindle structure and the silicon nitride sidewall, on the surface of the tunnelling field-effect transistor substrate to be a position of a second pole, wherein the second pole is a drain or a source, and the second pole is different from the first pole.

TSAI HAOCHENG (CN)
YANG XICHAO (CN)
ZHANG CHENXIONG (CN)

PCT/CN2016/109845

June 21, 2018

December 14, 2016

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HUAWEI TECH CO LTD (CN)

H01L21/331; H01L21/335; H01L29/66

US20140170827A1	2014-06-19
CN101777580A	2010-07-14
CN101699617A	2010-04-28
CN103985745A	2014-08-13
CN102664165A	2012-09-12
CN104134695A	2014-11-05

SHENPAT INTELLECTUAL PROPERTY AGENCY (CN)

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