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Title:
SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/102314
Kind Code:
A1
Abstract:
Provided is a novel semiconductor material. Specifically provided is a semiconductor material which is an oxide containing metallic elements and nitrogen, the metallic elements being indium (In), element M (wherein M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn), and the nitrogen being introduced into oxygen defects in the oxide or bound to the atoms of the metallic elements.

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Inventors:
YAMAZAKI SHUNPEI (JP)
SAMBONSUGE SHOTA
YAMANE YASUMASA (JP)
ENDO YUTA
OKUNO NAOKI (JP)
Application Number:
PCT/IB2018/058981
Publication Date:
May 31, 2019
Filing Date:
November 15, 2018
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/363; C23C14/08; H01L21/336; H01L21/8242; H01L27/108; H01L27/1156; H01L29/786; H01L29/788; H01L29/792
Foreign References:
JP2014056945A2014-03-27
JP2017034051A2017-02-09
JP2017017320A2017-01-19
JP2016167584A2016-09-15
JP2015144251A2015-08-06
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