Title:
SEMICONDUCTOR MATERIAL, METHOD FOR MANUFACTURING SEMICONDUCTOR MATERIAL, COMBINATION OF n-TYPE SEMICONDUCTOR MATERIAL AND p-TYPE SEMICONDUCTOR MATERIAL, METHOD FOR MANUFACTURING COMPOSITE SEMICONDUCTOR MATERIAL, COMPOSITE SEMICONDUCTOR MATERIAL, AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/002935
Kind Code:
A1
Abstract:
The present invention is a semiconductor material containing an electroconductive polymer and a dopant. A semiconductor material causing the type of the semiconductor to be converted according to the concentration of a dopant has a high utility value and is capable of offering new uses.
Inventors:
HWANG SUNBIN (JP)
ADACHI CHIHAYA (JP)
ADACHI CHIHAYA (JP)
Application Number:
PCT/JP2016/069495
Publication Date:
January 05, 2017
Filing Date:
June 30, 2016
Export Citation:
Assignee:
UNIV KYUSHU NAT UNIV CORP (JP)
International Classes:
C08G61/12; H01L35/24; H01L35/34; H01L51/00; H01L51/30; H01L51/40
Domestic Patent References:
| WO2014133029A1 | 2014-09-04 |
Foreign References:
| JPS53143180A | 1978-12-13 |
Attorney, Agent or Firm:
SIKS & CO. (JP)
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