Title:
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2010/104145
Kind Code:
A1
Abstract:
Disclosed is a semiconductor memory device the reliability, performance, or quality of which is improved by accurately controlling the thickness of layers comprising an electron- capturing layer and tunnel layer. Also disclosed is a method of producing the semiconductor memory device. The semiconductor memory device (1) is comprised of a Si substrate (2), a SiC layer (3) formed on the Si substrate (2), a metal layer (4) formed on the SiC layer (3), and a SiO2 layer (5) formed on the metal layer (4). The metal layer (4) is a layer acting as an electron-capturing layer. Because the metal layer (4) captures electrons, the resistance value of the semiconductor memory device (1) changes, so the device functions as a non-volatile variable resistance memory device. Further, in the semiconductor memory device (1), as the metal layer (4) can be formed on the SiC layer (3) with accurately controlled thickness, the metal layer (4) will not be distributed to other layers which are adjacent, and reliability, performance, or quality as a semiconductor memory device (1) will be improved.
Inventors:
SUDA YOSHIYUKI (JP)
NOMURA AKINARI (JP)
NOMURA AKINARI (JP)
Application Number:
PCT/JP2010/054108
Publication Date:
September 16, 2010
Filing Date:
March 11, 2010
Export Citation:
Assignee:
UNIV TOKYO NAT UNIV CORP (JP)
SUDA YOSHIYUKI (JP)
NOMURA AKINARI (JP)
SUDA YOSHIYUKI (JP)
NOMURA AKINARI (JP)
International Classes:
H01L27/10; H01L29/66; H01L29/88
Foreign References:
| JPH08255878A | 1996-10-01 | |||
| JP2007053171A | 2007-03-01 | |||
| JP2006229227A | 2006-08-31 | |||
| JPH06275791A | 1994-09-30 | |||
| JP2008091854A | 2008-04-17 |
Attorney, Agent or Firm:
Shin-yu International Patent Firm (JP)
Patent business corporation Nobutomo international patent firm (JP)
Patent business corporation Nobutomo international patent firm (JP)
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