Title:
SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2011/024455
Kind Code:
A1
Abstract:
Disclosed are a resistance-change semiconductor memory device that has a stable resistance change without being influenced by the base thereof and that is suitable for increased capacity, and a production method therefor. The semiconductor memory device is equipped with a first contact plug (104) that is formed in the interior of a first contact hole (103) that has been formed through a first interlayer dielectric (102), a bottom electrode (105) that has a thicker film thickness upon the first contact plug (104) than upon the first interlayer dielectric (102) and that has a level upper surface, a resistance change layer (106), and a top electrode (107); wherein the bottom electrode (105), the resistance change layer (106), and the top electrode (107) form a resistance change element.
Inventors:
MIKAWA TAKUMI
OKADA TAKASHI
OKADA TAKASHI
Application Number:
PCT/JP2010/005261
Publication Date:
March 03, 2011
Filing Date:
August 26, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
MIKAWA TAKUMI
OKADA TAKASHI
MIKAWA TAKUMI
OKADA TAKASHI
International Classes:
H01L27/10; H01L45/00; H01L49/00
Foreign References:
| JP2008192995A | 2008-08-21 | |||
| JP2009004725A | 2009-01-08 | |||
| JP2006318982A | 2006-11-24 | |||
| JP2008198941A | 2008-08-28 | |||
| JP2007250635A | 2007-09-27 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
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