Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/042566
Kind Code:
A1
Abstract:
A semiconductor memory device (5) comprises: a storage unit (4) that has a storage memory cell (4A) that is for storage of data; a reference memory cell (1) that has a memory transistor (1A) that includes a floating gate and an oxide film; a film thickness detection unit (2) that detects the thickness of the oxide film; and an applied voltage generation unit (3) that generates a write/erase voltage to be applied to the storage memory cell on the basis of detection results from the film thickness detection unit.
Inventors:
HAMA TAKASHIGE (JP)
YAMAMOTO SEIICHI (JP)
YAMAMOTO SEIICHI (JP)
Application Number:
PCT/JP2022/029753
Publication Date:
March 23, 2023
Filing Date:
August 03, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
G11C16/04; G11C16/10; G11C16/14
Foreign References:
| JP2004071094A | 2004-03-04 | |||
| JPH0359888A | 1991-03-14 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
Download PDF: