Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/112236
Kind Code:
A1
Abstract:
This semiconductor memory device has a first conductive layer, a second conductive layer, a first conductive column, a first semiconductor layer, and a first memory layer. The first conductive layer extends in a first direction. The second conductive layer extends in the first direction and aligns with the first conductive layer in a third direction which intersects the first direction. The first conductive column passes through the first conductive layer and the second conductive layer in the third direction. The first semiconductor layer contacts the first conductive layer and the second conductive layer, and faces the first conductive column in the first direction. The first memory layer is positioned between the first semiconductor layer and the first conductive column.
Inventors:
TAKEKIDA HIDETO (JP)
MURAKAMI YOSUKE (JP)
NAKATSUKA KEISUKE (JP)
HAN YEFEI (JP)
MURAKAMI YOSUKE (JP)
NAKATSUKA KEISUKE (JP)
HAN YEFEI (JP)
Application Number:
PCT/JP2021/046434
Publication Date:
June 22, 2023
Filing Date:
December 16, 2021
Export Citation:
Assignee:
KIOXIA CORP (JP)
International Classes:
H01L21/336; H01L29/788; H01L29/792
Domestic Patent References:
| WO2021192051A1 | 2021-09-30 |
Foreign References:
| US20210050359A1 | 2021-02-18 | |||
| JP2019526934A | 2019-09-19 |
Attorney, Agent or Firm:
SHIGA INTERNATIONAL PATENT OFFICE (JP)
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