Title:
SEMICONDUCTOR MEMORY ELEMENT, SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR SYSTEM AND CONTROL METHOD
Document Type and Number:
WIPO Patent Application WO/2018/186035
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor memory element, a semiconductor memory device, a semiconductor system, and a control method, allowing information to be written in a stable manner. [Solution] Provided is the semiconductor memory element containing: a first transistor into which information is written that has a gate insulation film at least partially comprising a ferroelectric material; and a second transistor connected via one of either the source or the drain to the source or the drain of the first transistor. The threshold voltage of the first transistor is smaller than 0 V when information is written and erased.
Inventors:
TSUKAMOTO MASANORI (JP)
Application Number:
PCT/JP2018/005617
Publication Date:
October 11, 2018
Filing Date:
February 19, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/1159; G11C11/22
Foreign References:
| JPH11176958A | 1999-07-02 | |||
| JPH06196647A | 1994-07-15 | |||
| JPH05205487A | 1993-08-13 | |||
| JP2009230835A | 2009-10-08 | |||
| JP2007214532A | 2007-08-23 | |||
| JPH08139286A | 1996-05-31 | |||
| JP2001229685A | 2001-08-24 |
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
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