Title:
SEMICONDUCTOR MEMORY, REFRESH METHOD, CONTROL METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/193336
Kind Code:
A1
Abstract:
A semiconductor memory (10), a refresh method, a control method, and an electronic device. The semiconductor memory (10) comprises a main storage area (11) and a mark storage area (12); a plurality of storage groups (111-1, 111-2) are provided in the main storage area (11), and a plurality of flag bits (121-1, 121-2) are provided in the mark storage area (12), wherein each storage group (111-1, 111-2) corresponds to one flag bit (121-1, 121-2), and the flag bit (121-1, 121-2) is at least used for indicating whether at least one storage unit in the storage group (111-1, 111-2) has a specific state, the specific state comprising "occupied".
Inventors:
LU HUAN (CN)
Application Number:
PCT/CN2022/098059
Publication Date:
October 12, 2023
Filing Date:
June 10, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/402
Foreign References:
| CN114093407A | 2022-02-25 | |||
| CN101017448A | 2007-08-15 | |||
| CN111177017A | 2020-05-19 | |||
| CN104317527A | 2015-01-28 | |||
| CN104636285A | 2015-05-20 | |||
| US20120317386A1 | 2012-12-13 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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