Title:
SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/023821
Kind Code:
A1
Abstract:
In a method for producing a semiconductor by performing superimposed doping
on a plurality of dopants in a semiconductor substrate, a (2×n) structure
is evaporated by a first dopant and its thin line structure is formed on the substrate,
the semiconductor substrate is then brought to a temperature capable of epitaxial
growth and a semiconductor crystal layer is grown epitaxially on the semiconductor
substrate where the first dopant is deposited after depositing a second or third
or subsequent dopant on the semiconductor substrate. Subsequently, a superimposed
doping layer composed of the first and second or third and subsequent dopants
is formed in the semiconductor substrate, and the plurality of dopants are activated
electrically or optically by annealing the superimposed doping layer at a high
temperature. Consequently, superimposed doping of a plurality of kinds of elements
as dopants can be performed to a specific depth even in the case of an element semiconductor.
Inventors:
MIKI, Kazushi (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki 47, 3050047, JP)
三木 一司 (〒47 茨城県つくば市千現一丁目２番地１ 独立行政法人物質・材料研究機構内 Ibaraki, 3050047, JP)
YAGI, Shuhei (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki 47, 3050047, JP)
八木 修平 (〒47 茨城県つくば市千現一丁目２番地１ 独立行政法人物質・材料研究機構内 Ibaraki, 3050047, JP)
三木 一司 (〒47 茨城県つくば市千現一丁目２番地１ 独立行政法人物質・材料研究機構内 Ibaraki, 3050047, JP)
YAGI, Shuhei (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki 47, 3050047, JP)
八木 修平 (〒47 茨城県つくば市千現一丁目２番地１ 独立行政法人物質・材料研究機構内 Ibaraki, 3050047, JP)
Application Number:
JP2007/066584
Publication Date:
February 28, 2008
Filing Date:
August 27, 2007
Export Citation:
Assignee:
NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-shi Ibaraki, 47, 3050047, JP)
独立行政法人物質・材料研究機構 (〒47 茨城県つくば市千現一丁目２番地１ Ibaraki, 3050047, JP)
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 21, 1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関一丁目３番１号 Tokyo, 1008921, JP)
MIKI, Kazushi (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki 47, 3050047, JP)
三木 一司 (〒47 茨城県つくば市千現一丁目２番地１ 独立行政法人物質・材料研究機構内 Ibaraki, 3050047, JP)
独立行政法人物質・材料研究機構 (〒47 茨城県つくば市千現一丁目２番地１ Ibaraki, 3050047, JP)
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 21, 1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関一丁目３番１号 Tokyo, 1008921, JP)
MIKI, Kazushi (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki 47, 3050047, JP)
三木 一司 (〒47 茨城県つくば市千現一丁目２番地１ 独立行政法人物質・材料研究機構内 Ibaraki, 3050047, JP)
International Classes:
H01L29/06; H01L21/20; H01L21/203; H01L21/22; H01L29/82; H01L29/02; H01L21/02; H01L29/66
Attorney, Agent or Firm:
NISHIZAWA, Toshio (Kudan-Horie Bldg. 6F, 3-14 Kudan-kita 4-chom, Chiyoda-ku Tokyo 73, 1020073, JP)