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Title:
SEMICONDUCTOR MODULE BONDING STRUCTURE AND BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/049780
Kind Code:
A1
Abstract:
A semiconductor module bonding structure (4a) comprises: a semiconductor module (11) including a semiconductor element (12) and a positive electrode terminal (12p) serving as a plate-like power terminal electrically connected to the semiconductor element (12); and a main P-bus bar (6) serving as a bus bar including a plate-like bonding portion (7) bonded to the positive electrode terminal (12p) of the semiconductor module (11). The positive electrode terminal (12p) of the semiconductor module (11) and the bonding portion (7) of the main P-bus bar (6) are configured such that the positive electrode terminal (12p), which has a relatively smaller plate thickness, has a plate width greater than a plate width of the bonding portion (7), which has a relatively greater plate thickness. The positive electrode terminal (12p) and the bonding portion (7) are bonded to each other by performing fusion-welding in an arrangement in which the respective plate thickness directions are orthogonal to each other.

Inventors:
HARADA NAOHISA (JP)
KONDO HIROSHI (JP)
ISHIKAWA KYOSUKE (JP)
KAWADE ATSUSHI (JP)
Application Number:
PCT/JP2018/032339
Publication Date:
March 14, 2019
Filing Date:
August 31, 2018
Export Citation:
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Assignee:
DENSO CORP (JP)
International Classes:
H02M7/48; H01L23/48; H01R4/02; H01R43/02
Foreign References:
JP2016208740A2016-12-08
JP2007053295A2007-03-01
JP2011172469A2011-09-01
Attorney, Agent or Firm:
AICHI, TAKAHASHI, IWAKURA & ASSOCIATES (JP)
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