Title:
SEMICONDUCTOR MODULE AND CONTROL METHOD OF SAME
Document Type and Number:
WIPO Patent Application WO/2010/084550
Kind Code:
A1
Abstract:
A high density semiconductor module able to suitably detect temperature rise and perform suitable control. A multilayer structure comprising a lower layer chip (11) and an upper layer chip (12) is mounted on top of a lead frame (15) formed from copper or other material with high thermal conductivity. Similarly, another multilayer structure comprising a lower layer chip (13) and an upper layer chip (14) is mounted on top of the lead frame (15). Further, a control circuit chip (16) is mounted between these two multilayer structures. Temperature sensors (30) are mounted to the inward sides (the sides where the control circuit chip (16) is located) on the upper surfaces of the lower chips (11, 13). The temperature sensors (30) are set on top of the interconnect (41) which serves as the current path.
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Inventors:
INOUE, Takashi (6-3, Kitano 3-chome, Niiza-sh, Saitama 66, 〒3528666, JP)
井上隆 (〒66 埼玉県新座市北野3丁目6番3号 サンケン電気株式会社内 Saitama, 〒3528666, JP)
井上隆 (〒66 埼玉県新座市北野3丁目6番3号 サンケン電気株式会社内 Saitama, 〒3528666, JP)
Application Number:
JP2009/006949
Publication Date:
July 29, 2010
Filing Date:
December 17, 2009
Export Citation:
Assignee:
Sanken Electric Co.,Ltd. (6-3 Kitano 3-chome, Niiza-shi Saitama, 66, 〒3528666, JP)
サンケン電気株式会社 (〒66 埼玉県新座市北野3丁目6番3号 Saitama, 〒3528666, JP)
INOUE, Takashi (6-3, Kitano 3-chome, Niiza-sh, Saitama 66, 〒3528666, JP)
サンケン電気株式会社 (〒66 埼玉県新座市北野3丁目6番3号 Saitama, 〒3528666, JP)
INOUE, Takashi (6-3, Kitano 3-chome, Niiza-sh, Saitama 66, 〒3528666, JP)
International Classes:
H01L25/065; H01L23/58; H01L25/07; H01L25/18
Attorney, Agent or Firm:
HORI, Shiroyuki et al. (1F Shoyu-kaikan Bldg, 3-3-1 Kasumigaseki, Chiyoda-k, Tokyo 13, 〒1000013, JP)
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