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Title:
SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/186644
Kind Code:
A1
Abstract:
Provided are a semiconductor module and a semiconductor device that can be easily manufactured, and manufacturing methods therefor. A semiconductor module 1 is provided with: a wiring layer 2 that includes conductor layers 21; and a substrate body 3 on one surface of which the wiring layer 2 is formed and which is provided with protrusion electrodes 34 each penetrating in the thickness direction so as to protrude to the other surface side. The protrusion electrodes 34 are disposed so as to be capable of being in electrical conduction with the respective conductor layers 21. In addition, the substrate body 3 is preferably a silicon substrate, and the protrusion electrodes 34 are each preferably a P-type semiconductor region.

Inventors:
MATSUMOTO Yasuhiro (Access Bldg. 3F 11-8, Asahi-cho, Hachioji-sh, Tokyo 83, 〒1920083, JP)
KUMAUCHI Takahiro (Access Bldg. 3F 11-8, Asahi-cho, Hachioji-sh, Tokyo 83, 〒1920083, JP)
Application Number:
JP2018/012123
Publication Date:
October 03, 2019
Filing Date:
March 26, 2018
Export Citation:
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Assignee:
ULTRAMEMORY INC. (Access Bldg. 3F, 11-8 Asahi-cho, Hachioji-sh, Tokyo 83, 〒1920083, JP)
International Classes:
H01L27/00; H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
WO2010023812A12010-03-04
Foreign References:
JP2006012889A2006-01-12
JP2013191753A2013-09-26
JPS6130059A1986-02-12
Attorney, Agent or Firm:
SHOBAYASHI Masayuki et al. (Sapia Tower, 1-7-12 Marunouchi, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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