Title:
SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/207406
Kind Code:
A1
Abstract:
Provided are: a semiconductor module capable of further improving an effect of cancelling parasitic inductance caused by current; and a power conversion device including the same. This semiconductor module is provided with: a first lead frame (14); a second lead frame (13), a third lead frame (16), an insulating material (31), a first semiconductor element (C1), and a second semiconductor element (C2). The first lead frame (14) is a flat plate-like wiring path to which a first potential is applied. The second lead frame (13) is a flat plate-like wiring path including an output terminal. The third lead frame (16) is a flat plate-like wiring path to which a second potential is applied. The insulating material (31) seals the first and second lead frames (14, 13) so that the first and second lead frames (14, 13) are integrated. The first semiconductor element (C1) is directly joined to the first lead frame (14) through a joining material (G1), and the second semiconductor element (C2) is directly joined to the second lead frame (13) through a joining material (G2). The first lead frame (14) and the second lead frame (13) face each other with the insulating material (31) therebetween.
Inventors:
YANO SHINYA (JP)
NAKAYAMA YASUSHI (JP)
NAKAYAMA YASUSHI (JP)
Application Number:
PCT/JP2018/000691
Publication Date:
November 15, 2018
Filing Date:
January 12, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L25/07; H01L25/18
Domestic Patent References:
| WO2016136457A1 | 2016-09-01 |
Foreign References:
| JP2007299781A | 2007-11-15 | |||
| JP2013219290A | 2013-10-24 | |||
| JP2013179362A | 2013-09-09 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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