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Patent Searching and Data


Title:
SEMICONDUCTOR-MOUNTING RADIATION BASE PLATE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/217221
Kind Code:
A1
Abstract:
The invention solves the problem that, in prior art, since a semiconductor-mounting radiation base plate proceeds through a cooling step during casting by undergoing directional solidification, the metal structure thereof is formed into a coarse columnar crystals from the cooling side, leading to flaws in the fastening effects and radiation characteristics of the radiation base, and in the joined state of a semiconductor chip against a metal circuit layer. This semiconductor-mounting radiation base plate comprises: an insulating substrate 12 having adhered thereto a metal circuit layer whereon a semiconductor chip is to be mounted; and a strength member 13 separated from the insulated substrate inside a radiation base, the radiation base being formed from a similar metal material to the metal circuit layer and adhered to the insulating substrate 12 in a similar manner to the metal circuit layer, sandwiching the insulating substrate 12 on the side facing away from the metal circuit layer. In this semiconductor-mounting radiation base plate, the crystal grains of the metal structure in one of the portions among the radiation base and the metal circuit layer is refined by a crystal-refining material 25 attached to the mold, thereby preventing a negative effect caused by the columnar crystal structure.

Inventors:
TANAKA KEISUKE (JP)
OYA DAISUKE (JP)
ISHIHARA MIKIO (JP)
IWASA TATSUYA (JP)
SAITO KOJI (JP)
WAKABAYASHI YUKI (JP)
Application Number:
PCT/JP2017/019898
Publication Date:
December 21, 2017
Filing Date:
May 29, 2017
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/36; B22C3/00; B22D19/00; B22D27/18; B22D27/20; H01L23/12; H05K1/02
Foreign References:
JP2008253996A2008-10-23
JP2011166122A2011-08-25
JP2014133240A2014-07-24
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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