Title:
SEMICONDUCTOR NANOPARTICLES, SEMICONDUCTOR NANOPARTICLE-CONTAINING DISPERSION LIQUID, AND FILM
Document Type and Number:
WIPO Patent Application WO/2018/198684
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: semiconductor nanoparticles which exhibit excellent atmosphere endurance; a semiconductor nanoparticle-containing dispersion liquid which contains the semiconductor nanoparticles; and a film which contains the semiconductor nanoparticles. Semiconductor nanoparticles according to the present invention are configured such that: zinc, sulfur and indium are detected by energy dispersive X-ray spectroscopy; and the molar ratio of zinc to indium, namely Zn/In, as determined by the energy dispersive X-ray spectroscopy satisfies formula (1a).
7 ≤ Zn/In ≤ 15 (1a)
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Inventors:
SASAKI TSUTOMU (JP)
Application Number:
PCT/JP2018/014127
Publication Date:
November 01, 2018
Filing Date:
April 02, 2018
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C01B25/08
Domestic Patent References:
| WO2016185933A1 | 2016-11-24 |
Foreign References:
| JP2016172829A | 2016-09-29 | |||
| JP2015147726A | 2015-08-20 | |||
| JP2012144587A | 2012-08-02 | |||
| JP2011194562A | 2011-10-06 |
Other References:
KIM, SUNGWOO ET AL.: "Highly Luminescent InP/GaP/ZnS Nanocrystals and Their Application to White Light-Emitting Diodes", J. AM. CHEM. SOC., vol. 134, no. 8, 3 February 2012 (2012-02-03), pages 3804 - 3809, XP055332559, ISSN: 0002-7863
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
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