Title:
SEMICONDUCTOR NON-DESTRUCTIVE INSPECTION DEVICE AND SEMICONDUCTOR NON-DESTRUCTIVE INSPECTION METHOD
Document Type and Number:
WIPO Patent Application WO/2013/161860
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor non-destructive inspection device and a semiconductor non-destructive inspection method which are capable of acquiring, from a laminated structure such as a semiconductor wafer including a semiconductor layer, electronic physical property information of each layer of the laminated structure and electronic physical property information of each interlayer interface thereof.
[Solution] A semiconductor non-destructive inspection device (1) comprises: a means for dividing pulse laser light (9) into probe light (L1) and pump light (L2); a means for irradiating a semiconductor wafer (5) with the pump light (L2) to thereby emit an electromagnetic wave (10) from an irradiation position; a lock-in amplifier (28) for detecting the amplitude intensity of the electromagnetic wave (10) via a detection element (19) and converting the amplitude intensity into a time-series waveform corresponding to the temporal waveform of the amplitude intensity of the electromagnetic wave (10); a time delay means (15) for periodically delaying the time at which the amplitude intensity is detected by the detection element (19); and a physical property information acquisition means for acquiring electronic physical property information of each layer of a laminated structure and electronic physical property information of each interlayer interface thereof by comparing the time-series waveform and the time-series waveform of each single-layer structure of a laminated structure previously prepared as reference data.
More Like This:
Inventors:
KIWA TOSHIHIKO (JP)
TSUKADA KEIJI (JP)
TSUKADA KEIJI (JP)
Application Number:
PCT/JP2013/062025
Publication Date:
October 31, 2013
Filing Date:
April 24, 2013
Export Citation:
Assignee:
UNIV OKAYAMA NAT UNIV CORP (JP)
International Classes:
G01N21/63; G01N21/35; H01L21/66
Domestic Patent References:
| WO2011096563A1 | 2011-08-11 | |||
| WO2011108518A1 | 2011-09-09 |
Foreign References:
| JPH09246341A | 1997-09-19 | |||
| JP2005083834A | 2005-03-31 |
Other References:
KEN OMURA ET AL.: "Laser Reiki THz Kenbikyo ni yoru SiGe Wafer no Hihakai Kensa", DAI 59 KAI EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, 15 March 2012 (2012-03-15), pages 4 - 198
TOSHIHIKO KIWA ET AL.: "Laser terahertz-emission microscope for inspecting electrical faults in integrated circuits", OPTICS LETTERS, vol. 28, no. 21, 2003, pages 2058 - 2060
TOSHIHIKO KIWA: "Terahertz-ha Chemical Kenbikyo to Oyo Kaitaku", 0 PLUS E, vol. 35, no. 2, 25 January 2013 (2013-01-25), pages 147 - 151
TOSHIHIKO KIWA ET AL.: "Laser terahertz-emission microscope for inspecting electrical faults in integrated circuits", OPTICS LETTERS, vol. 28, no. 21, 2003, pages 2058 - 2060
TOSHIHIKO KIWA: "Terahertz-ha Chemical Kenbikyo to Oyo Kaitaku", 0 PLUS E, vol. 35, no. 2, 25 January 2013 (2013-01-25), pages 147 - 151
Attorney, Agent or Firm:
YANO Juichiro (JP)
Juichiro Yano (JP)
Juichiro Yano (JP)
Download PDF: