Title:
SEMICONDUCTOR OPTICAL DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/012925
Kind Code:
A1
Abstract:
A semiconductor optical device (10) according to the present invention is provided with a plurality of waveguide structures (13_1, 13_2) on a second lower cladding layer (12) on a same substrate (11); the waveguide structures (13_1, 13_2) are sequentially provided with first lower cladding layers (141_1, 141_2), active layers (142_1, 142_2), first upper cladding layers (143_1, 143_2) and second upper cladding layers (15_1, 15_2); the waveguide structures respectively comprise diffraction gratings (18_1, 18_2); with respect to the waveguide structures (13_1, 13_2), the first lower cladding layers (141_1, 141_2), the active layers (142_1, 142_2) and the first upper cladding layers (143_1, 143_2) are different from each other in the thickness; and the coupling coefficients of the diffraction gratings (18_1, 18_2) are generally equal to each other. Consequently, a semiconductor optical device according to the present invention is able to provide a multiwavelength laser operation in a single mode with high optical output and low threshold value.
Inventors:
FUJII TAKURO (JP)
MATSUO SHINJI (JP)
TSURUGAYA TAKUMA (JP)
MATSUO SHINJI (JP)
TSURUGAYA TAKUMA (JP)
Application Number:
PCT/JP2021/028920
Publication Date:
February 09, 2023
Filing Date:
August 04, 2021
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/12; H01S5/227
Domestic Patent References:
| WO2021144949A1 | 2021-07-22 | |||
| WO2009055894A1 | 2009-05-07 |
Foreign References:
| JP2001189522A | 2001-07-10 | |||
| JP2012191030A | 2012-10-04 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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