Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR OPTICAL DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/049268
Kind Code:
A1
Abstract:
This semiconductor optical device is provided with: a semiconductor substrate that has a length and width; a laser section that is provided on the semiconductor substrate, and includes an active layer; and an optical waveguide section that is provided on the semiconductor substrate as adjacent to the laser section, and is joined to the laser section. The optical waveguide section includes a core layer that is connected to an end portion of the active layer, and a pair of cladding layers that sandwich the core layer therebetween. The optical waveguide section outputs, from an output end surface thereof, light input from the joining interface between the optical waveguide section and the laser section. The semiconductor optical device is also provided with a reflection suppressing layer that is provided to the upper surface of the optical waveguide section. Among the upper surface of the optical waveguide section, the reflection suppressing layer overlaps the center portion of the optical waveguide section in the length direction, and is provided shorter than the total length of the optical waveguide section. The reflection suppressing layer suppresses, at the center portion, the reflection of light traveling in the cladding layers toward the center portion.

Inventors:
FUCHIDA AYUMI (JP)
SAKAINO GO (JP)
UETSUJI TETSUYA (JP)
NAKAMURA NAOKI (JP)
Application Number:
PCT/JP2017/032295
Publication Date:
March 14, 2019
Filing Date:
September 07, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/12; H01S5/026
Foreign References:
JPH02271583A1990-11-06
JPH11154770A1999-06-08
US20020176463A12002-11-28
JP2003234533A2003-08-22
JPH11337889A1999-12-10
JPH11261168A1999-09-24
JPH11135876A1999-05-21
Other References:
ROLLAND, CLAUDE ET AL.: "Improved Extinction Ratio of Waveguide Electroabsorption Optical Modulators Induced by an InGaAs Absorbing Layer", JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 10, no. 12, 1992, pages 1907 - 1911, XP011148730, ISSN: 0733-8724, DOI: doi:10.1109/50.202816
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Download PDF: