Title:
SEMICONDUCTOR OPTICAL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/198529
Kind Code:
A1
Abstract:
The present invention is provided with a wavelength tunable laser (102) which is formed on a substrate (101) that is formed of a single crystal silicon. The wavelength tunable laser (102) is composed of: a light emitting part (103) which is formed of a group III-V compound semiconductor; and external resonators (103a, 103b), each of which is provided with an optical filter. Cores constituting the external resonators (103a, 103b) are configured from one of SiN, SiON and SiOn (wherein n is less than 2).
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Inventors:
AIHARA TAKUMA (JP)
MATSUO SHINJI (JP)
TSUCHIZAWA TAI (JP)
KAKITSUKA TAKAAKI (JP)
HIRAKI TATSUROU (JP)
MATSUO SHINJI (JP)
TSUCHIZAWA TAI (JP)
KAKITSUKA TAKAAKI (JP)
HIRAKI TATSUROU (JP)
Application Number:
PCT/JP2019/013591
Publication Date:
October 17, 2019
Filing Date:
March 28, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/14; G02B6/122; G02B6/125; G02F1/01; H01S5/026
Foreign References:
| JP2016213379A | 2016-12-15 | |||
| JP2010186132A | 2010-08-26 | |||
| JP2007047326A | 2007-02-22 | |||
| JP2016156933A | 2016-09-01 | |||
| US20180081118A1 | 2018-03-22 |
Other References:
H. NISHI ET AL.: "SiOxNy Back-End Integration Technologies for Heterogeneously Integrated Si Platform", ECS TRANSACTIONS, vol. 75, no. 8, 2 October 2016 (2016-10-02), pages 211 - 221, XP055643271
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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