SEMICONDUCTOR OPTICAL ELEMENT

WIPO Patent Application WO/2023/281741

A1

A semiconductor optical element according to the present disclosure comprises: a ridge structure (10) that includes a cladding layer (11) of a first conductivity type and an active layer (12) and is provided on a semiconductor substrate (5) of the first conductivity type; an embedding structure (20) provided on both side surfaces of the ridge structure (10); a cladding layer (30) of a second conductivity type and a contact layer (40) of the second conductivity type provided on the surface of the embedding structure (20); a ridge upper cladding layer (31) of the second conductivity type provided above the ridge structure (10); a recess (51) of which the bottom surface is the upper surface of the ridge upper cladding layer (31) and the side surfaces are the cladding layer and the contact layer of the second conductivity type; a mesa structure (50) in which both side surfaces are formed by a mesa reaching from the contact layer (40) to the semiconductor substrate (5); and an insulation film (60) covering the bottom surface and both side surfaces of the recess (51), the contact layer (40), and both side surfaces of the mesa structure (50).

MORIKAWA TAKAYA (JP)
SHINOHARA KOSUKE (JP)

PCT/JP2021/025986

January 12, 2023

July 09, 2021

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MITSUBISHI ELECTRIC CORP (JP)

H01S5/22

JPH06291416A	1994-10-18
JP2005286032A	2005-10-13
US20040057646A1	2004-03-25
JP2021034388A	2021-03-01
JPH0697603A	1994-04-08
JP2003264342A	2003-09-19
JPH08111565A	1996-04-30
JPS6132587A	1986-02-15

PALMO PATENT FIRM, P.C. (JP)

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