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Title:
SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/059066
Kind Code:
A1
Abstract:
The present invention maintains, at a constant level, the output light intensity of a semiconductor optical integrated element on which a DFB laser, an EA modulation unit, and an SOA are monolithically integrated. The semiconductor optical integrated element comprises: a DFB laser; an EA modulator connected to the DFB laser; an SOA that is monolithically integrated on the same substrate as the DFB laser and the EA modulator and that is connected to the emission end of the EA modulator; and a light receiver that is disposed on the emission end side of the SOA and that has the same composition as the SOA. The light receiver is given a forward bias voltage or a forward bias current, and the light receiver is configured to monitor changes in detected values corresponding to the intensity of light input to the receiver so that the drive current to the DFB laser and SOA is feedback-controlled.

Inventors:
SHINDO Takahiko (9-11 Midori-cho 3-chome, Musashino-sh, Tokyo 85, 〒1808585, JP)
KOBAYASHI Wataru (9-11 Midori-cho 3-chome, Musashino-sh, Tokyo 85, 〒1808585, JP)
FUJIWARA Naoki (9-11 Midori-cho 3-chome, Musashino-sh, Tokyo 85, 〒1808585, JP)
KANAZAWA Shigeru (9-11 Midori-cho 3-chome, Musashino-sh, Tokyo 85, 〒1808585, JP)
Application Number:
JP2018/033845
Publication Date:
March 28, 2019
Filing Date:
September 12, 2018
Export Citation:
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Assignee:
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (5-1 Otemachi 1-chome, Chiyoda-ku Tokyo, 16, 〒1008116, JP)
International Classes:
H01S5/0683
Domestic Patent References:
WO2017135381A12017-08-10
WO2003032021A22003-04-17
WO2016136183A12016-09-01
Foreign References:
JP2013258336A2013-12-26
Attorney, Agent or Firm:
TANI & ABE, P.C. (6-20, Akasaka 2-chome Minato-k, Tokyo 52, 〒1070052, JP)
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