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Patent Searching and Data


Title:
SEMICONDUCTOR OPTICAL MODULE
Document Type and Number:
WIPO Patent Application WO/2019/225447
Kind Code:
A1
Abstract:
Provided is a semiconductor optical module that is capable of simultaneously improving the characteristics of a semiconductor laser, improving optical beam coupling efficiency with respect to optical fibers, and reducing power consumption. The present invention provides a semiconductor optical module in which: a semiconductor laser element region includes an active layer, a first clad layer in which the active layer is embedded, a second clad layer formed below the active layer and the first clad layer, and a heater which applies a temperature change to a waveguide; and an optical waveguide element region includes a spot size converter which converts the spot size of an incident laser beam, and an optical waveguide core layer in which the spot size converter is embedded. The first clad layer includes InP, the second clad layer is configured from a material lower in refractive index and higher in heat conductivity than the first clad layer, and a third clad layer lower in refractive index and lower in heat conductivity than the second clad layer is formed below the spot size converter and the heater.

Inventors:
YAMAOKA SUGURU (JP)
NAKAO RYO (JP)
KAKITSUKA TAKAAKI (JP)
MATSUO SHINJI (JP)
Application Number:
PCT/JP2019/019382
Publication Date:
November 28, 2019
Filing Date:
May 15, 2019
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/026; G02B6/12; G02B6/122
Foreign References:
JP2014192247A2014-10-06
JP2013026254A2013-02-04
JPH05327127A1993-12-10
JP2016156933A2016-09-01
US20170194764A12017-07-06
Other References:
NISHI, H. ET AL.: "SiOxNy Back-End Integration Technologies for Heterogeneously Integrated Si Platform", ECS TRANSACTIONS, vol. 75, no. 8, 2 October 2016 (2016-10-02), pages 211 - 221, XP055643271, DOI: 10.1149/07508.0211ecst
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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