Title:
SEMICONDUCTOR PHOTOCATHODE
Document Type and Number:
WIPO Patent Application WO/2002/050858
Kind Code:
A1
Abstract:
A semiconductor photocathode comprising a light absorbing layer (2) having a thickness (t2) of 0.2 $g(m)m to 0.19 $g(m)m. By limiting the thickness of the light absorbing layer (2), the part of lower electron density in one electron group is cut, the common region of adjacent electron density distributions is reduced, the transit time required for an electron to pass through is shortened, and therefor the common area is suppressed by diffusion. In addition, the electric field intensity is also increased, and the time resolution of infrared radiation can be considerably improved by the synergic effect. The time resolution can be improved up to 7.5 ps when the thickness of the light absorbing layer is 0.19 $g(m)m.
Inventors:
Niigaki, Minoru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Hirohata, Toru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Kan, Hirofumi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Mori, Kuniyoshi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Hirohata, Toru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Kan, Hirofumi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Mori, Kuniyoshi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Application Number:
PCT/JP2001/011095
Publication Date:
June 27, 2002
Filing Date:
December 18, 2001
Export Citation:
Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Niigaki, Minoru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Hirohata, Toru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Kan, Hirofumi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Mori, Kuniyoshi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Niigaki, Minoru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Hirohata, Toru c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Kan, Hirofumi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
Mori, Kuniyoshi c/o Hamamatsu, Photonics 1126-1 K. K. (Ichino-cho Hamamatsu-shi, Shizuoka, 435-8558, JP)
International Classes:
H01J1/34; H01J29/38; H01J31/50; H01J40/06; (IPC1-7): H01J1/34; H01J40/06
Attorney, Agent or Firm:
Hasegawa, Yoshiki (SOEI PATENT AND LAW FIRM, Okura-honkan 6-12 Ginza 2-chome Chuo-ku, Tokyo, 104-0061, JP)
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