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Title:
SEMICONDUCTOR PHOTODETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/098201
Kind Code:
A1
Abstract:
Disclosed is a semiconductor photodetection element (SP) equipped with: a silicon substrate (21) which is comprised of a first conductivity type semiconductor, and has a first main surface (21a) and a second main surface (21b) which oppose each other, with a second conductivity type semiconductor layer (23) formed on the first main surface (21a) side; and charge-transfer electrodes (25) which are provided above the first main surface (21a) and which transfer a generated charge. A first conductivity type accumulation layer (31) which has a higher impurity concentration than that of the silicon substrate (21) is formed on the second main surface (21b) side of the silicon substrate (21), and irregular recesses and projections (10) are formed at least in the region opposing the semiconductor region (23) of the second main surface (21b). The region of the second main surface (21b) of the silicon substrate (21) where the irregular recesses and projections (10) are formed is optically exposed.

Inventors:
YAMAMURA KAZUHISA (JP)
SAKAMOTO AKIRA (JP)
NAGANO TERUMASA (JP)
MIYAZAKI YASUHITO (JP)
YONETA YASUHITO (JP)
SUZUKI HISANORI (JP)
MURAMATSU MASAHARU (JP)
Application Number:
PCT/JP2010/051870
Publication Date:
September 02, 2010
Filing Date:
February 09, 2010
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS KK (JP)
YAMAMURA KAZUHISA (JP)
SAKAMOTO AKIRA (JP)
NAGANO TERUMASA (JP)
MIYAZAKI YASUHITO (JP)
YONETA YASUHITO (JP)
SUZUKI HISANORI (JP)
MURAMATSU MASAHARU (JP)
International Classes:
H01L31/10
Domestic Patent References:
WO2000062344A12000-10-19
Foreign References:
JPH10335624A1998-12-18
JP2008515196A2008-05-08
JPS59224183A1984-12-17
JPH07235658A1995-09-05
JP2002231993A2002-08-16
JP2005045073A2005-02-17
JPS50147230A1975-11-26
JPS6218075A1987-01-27
JPH06350068A1994-12-22
JPH10173998A1998-06-26
JP2008153311A2008-07-03
Other References:
See also references of EP 2403009A4
Attorney, Agent or Firm:
HASEGAWA, Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
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