SEMICONDUCTOR PHOTOELECTRIC SURFACE AND ITS MANUFACTURING METHOD, AND PHOTODETECTING TUBE USING SEMICONDUCTOR PHOTOELECTRIC SURFACE

Title:

SEMICONDUCTOR PHOTOELECTRIC SURFACE AND ITS MANUFACTURING METHOD, AND PHOTODETECTING TUBE USING SEMICONDUCTOR PHOTOELECTRIC SURFACE

Document Type and Number:

WIPO Patent Application WO/2003/107386

Kind Code:

A1

Abstract:

A semiconductor photoelectric surface comprises a support substrate (10), a photoelectric surface (30) which is formed by forming multiple semiconductor layers on the support substrate (10), and emits photoelectrons from a photoelectron emitting surface (341) in response to an incident beam for detection, and a film metal electrode (35) which is formed into a film so as to cover at least partially the support substrate (10) and partially the photoelectric surface (30) and is in ohmic contact with the photoelectric surface. The film metal electrode (35) contains titanium. The photoelectron emitting surface (341) which is not covered with the film metal electrode (35) and is an exposed surface of the photoelectric surface (30) has a negative electron affinity.

Inventors:

KOHNO YASUYUKI (JP)
NAGAI TOSHIMITSU (JP)
HASEGAWA YUTAKA (JP)

Application Number:

PCT/JP2003/006361

Publication Date:

December 24, 2003

Filing Date:

May 21, 2003

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
KOHNO YASUYUKI (JP)
NAGAI TOSHIMITSU (JP)
HASEGAWA YUTAKA (JP)

International Classes:

H01J1/34; H01J9/12; H01J40/06; H01J43/08; (IPC1-7): H01J40/06; H01J1/34; H01J7/18; H01J9/12

Foreign References:

JPH11297191A	1999-10-29
JPH09213205A	1997-08-15
JP2000311588A	2000-11-07
JPH02100242A	1990-04-12
JPH0718341U	1995-03-31
JP2001507498A	2001-06-05
JPH11135003A	1999-05-21

Other References: