SEMICONDUCTOR PHOTOELECTRIC SURFACE - HAMAMATSU PHOTONICS KK

Title:

SEMICONDUCTOR PHOTOELECTRIC SURFACE

Document Type and Number:

WIPO Patent Application WO/1999/016098

Kind Code:

A1

Abstract:

A phototube (10) comprises a photocathode (30) having photoelectric surface. In a sealed enclosure (20) whose inside is vacuum, the photoelectric cathode (30) and an anode (40) are opposed to each other. Voltages are applied to them through lead pins (51 and 52). The photocathode (30) includes a metallic support plate (31) to which is secured a sapphire plate (32) on which are formed an a-A$i(l)N matching layer (33), a p-type GaN active layer (34), and a CsO surface layer (35). The active layer (34) has a dopant concentration that increases from 1 x 10?16¿ cm?-3¿ in the surface up to 5 x 10?17¿ cm?-3¿ at a depth of 100 nm. The dopant concentration only at the deepest region over a thickness of several nanometers is 1 x 10?18¿ cm?-3¿. The crystallinity of the active layer (34) is improved, and the diffusion length is increased, improving the quantum efficiency and sharp-cut property.

Inventors:

NIHASHI TOKUAKI (JP)

Application Number:

PCT/JP1998/004119

Publication Date:

April 01, 1999

Filing Date:

September 11, 1998

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
NIHASHI TOKUAKI (JP)

International Classes:

H01J1/34; H01J40/06; (IPC1-7): H01J1/34; H01J40/06

Foreign References:

JPH021327B2	1990-01-11
JPS49114869A	1974-11-01
JPS5335434B1	1978-09-27
JPH06223709A	1994-08-12
JPH0750587B2	1995-05-31

Other References: