SEMICONDUCTOR PHOTOELECTRODE FOR DYE-SENSITIZED PHOTOELECTROCHEMICAL CELL, METHOD FOR PRODUCING SAID SEMICONDUCTOR PHOTOELECTRODE, AND DYE-SENSITIZED PHOTOELECTROCHEMICAL CELL

WIPO Patent Application WO/2013/054487

A1

Provided is a semiconductor photoelectrode for a dye-sensitized photoelectrochemical cell, wherein it is possible to sufficiently inhibit current from leaking from a collector electrode. Also provided is a dye-sensitized photoelectrochemical cell which uses the aforementioned semiconductor photoelectrode and from which a transparent conductive film is omitted. A semiconductor photoelectrode used in a dye-sensitized photoelectrochemical cell contains a collector (10) formed from a porous metal sheet having fine pores communicating with the front and the back, and a porous semiconductor layer (14) laminated on the collector (10) and for adsorbing a dye, wherein at least a portion of a section of the collector (10) excluding the section that comes into contact with the porous semiconductor layer (14) is covered with a protective film (12). A dye-sensitized photoelectrochemical cell is provided with the semiconductor photoelectrode between a transparent substrate and a conductive substrate functioning as a cathode electrode, the semiconductor photoelectrode functioning as an anode electrode and being disposed such that the porous semiconductor layer (14) is in the vicinity of or comes into contact with the transparent substrate.

SAYAMA KAZUHIRO (JP)
KOHNO MITSURU (JP)

PCT/JP2012/006320

April 18, 2013

October 03, 2012

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NAT INST OF ADVANCED IND SCIEN (JP)
NIPPON STEEL & SUMIKIN CHEM CO (JP)

H01M14/00; H01L31/04

WO2010150461A1

2010-12-29

JP2009245750A	2009-10-22
JP2010021091A	2010-01-28
JP2007073505A	2007-03-22
JP2004039471A	2004-02-05
JP2010267557A	2010-11-25

UCHIDA, MASARU (JP)
Masaru Uchida (JP)

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