Title:
SEMICONDUCTOR PHOTOELECTRODE, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR PHOTOELECTRODE AND LIGHT ENERGY CONVERTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2006/114972
Kind Code:
A1
Abstract:
A semiconductor photoelectrode is provided with a metal substrate having an uneven surface, and a semiconductor layer which is formed on a surface of the metal substrate and composed of a material having photocatalytic characteristics. Thus, light absorption efficiency is improved, and furthermore, charge recombination can be prevented.
Inventors:
Takashi OI.
Iwasaki, Yasukazu
Sayama, Kazuhiro
Iwasaki, Yasukazu
Sayama, Kazuhiro
Application Number:
PCT/JP2006/306465
Publication Date:
November 02, 2006
Filing Date:
March 29, 2006
Export Citation:
Assignee:
NISSAN MOTOR CO., LTD. (2 Takara-cho, Kanagawa-ku Yokohama-sh, Kanagawa 23, 22100, JP)
Takashi OI.
Iwasaki, Yasukazu
Sayama, Kazuhiro
Takashi OI.
Iwasaki, Yasukazu
Sayama, Kazuhiro
International Classes:
C25B11/06; B01J23/30; B01J35/02; C25B1/04; H01L31/04; H01M14/00
Attorney, Agent or Firm:
Miyoshi, Hidekazu (Toranomon Kotohira Tower, 2-8 Toranomon 1-chome, Minato-k, Tokyo 01, 10500, JP)
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