Title:
SEMICONDUCTOR PHOTOELECTRODE
Document Type and Number:
WIPO Patent Application WO/2019/230343
Kind Code:
A1
Abstract:
Through the present invention, the light energy conversion efficiency of a semiconductor photoelectrode is improved. A semiconductor photoelectrode 1 whereby the oxidation of water is advanced on a surface by irradiation with light, wherein the semiconductor photoelectrode 1 is provided with: a first semiconductor layer (12) layered on an insulating or electroconductive substrate 11; and a transparent electroconductive polymer layer 13 having an active function for promoting oxidation of water, the transparent electroconductive polymer layer 13 being layered on the first semiconductor layer 12 and being constituted from a transparent electroconductive polymer. Through the transparency of the transparent electroconductive polymer layer, light transmittance is enhanced, the transparent electroconductive polymer layer can be layered on the entire surface of the semiconductor layer, and the light energy conversion efficiency of the semiconductor photoelectrode can be enhanced.
Inventors:
UZUMAKI YUYA (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
Application Number:
PCT/JP2019/018749
Publication Date:
December 05, 2019
Filing Date:
May 10, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
B01J31/26; C25B11/06; B01J35/02; C25B9/00
Foreign References:
| JP2013049891A | 2013-03-14 | |||
| US20170141258A1 | 2017-05-18 | |||
| JP2015525296A | 2015-09-03 | |||
| JP2017206773A | 2017-11-24 |
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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