SEMICONDUCTOR PHYSICAL QUANTITY DETECTING SENSOR

WIPO Patent Application WO/2012/124366

A1

In the case of a sensor in which a movable electrode and a fixed electrode are formed of the same layer and the displacement of a movable portion occurs in the thickness direction of a support substrate, it is possible to detect the magnitude of the displacement of the movable portion, but it is impossible to detect the direction of the displacement. Therefore, a semiconductor physical quantity detecting sensor is provided with: (1) a first capacitance formed between a movable electrode and a first fixed electrode formed of a first conductive layer which is shared by the movable electrode; (2) a second capacitance formed between the movable electrode and a second fixed electrode formed of a second conductive layer different from the movable electrode in height above the substrate surface; and (3) an arithmetic circuit for calculating a physical quantity on the basis of the changes in the first and second capacitances occurring when the physical quantity is applied. An electrical signal from the first capacitance and an electrical signal from the second capacitance are each input to the arithmetic circuit.

YAMANAKA KIYOKO (JP)
JEONG HEEWON (JP)
TAKUBO CHISAKI (JP)

PCT/JP2012/050895

September 20, 2012

January 18, 2012

Click for automatic bibliography generation  

HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
YAMANAKA KIYOKO (JP)
JEONG HEEWON (JP)
TAKUBO CHISAKI (JP)

G01P15/125; B81B3/00; G01C19/5747; H01L29/84

JP2010127763A	2010-06-10
JP2007046927A	2007-02-22
JP2011128132A	2011-06-30

HIRAKI Yusuke et al. (JP)
Yusuke Hiraki (JP)

View/Download PDF      PDF Help

Previous Patent: LIGHT-DIFFUSING RESIN COMPOSITION AND LIGHT-DIFFUSING SHEET USING SAME

Next Patent: AIR CONDITIONING SYSTEM FOR SERVER ROOM MANAGEMENT