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Patent Searching and Data


Title:
SEMICONDUCTOR POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/096151
Kind Code:
A1
Abstract:
This semiconductor power conversion device has: the n (n is a natural number) number of reverse conversion devices (INVU1-INVUn), which are insulated from each other, and output voltages at three levels; and a reverse conversion device (INVUS), which has, as an input direct current voltage, a voltage (VDCS) that is a half or one third of the input direct current voltage (VDC) of the reverse conversion devices (INVU1-INVUn), and which is insulated from the reverse conversion devices (INVU1-INVUn), and outputs voltages at three levels. Then, the reverse conversion devices (INVU1-INVUn) and the reverse conversion device (INVu) are connected in series, and a voltage (VDC×n+VDCS) is outputted at a maximum.

Inventors:
HASEGAWA RYUTA
NAKAZAWA YOSUKE
IIO NAOTAKA
Application Number:
PCT/JP2012/000063
Publication Date:
July 19, 2012
Filing Date:
January 06, 2012
Export Citation:
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Assignee:
TOSHIBA KK (JP)
HASEGAWA RYUTA
NAKAZAWA YOSUKE
IIO NAOTAKA
International Classes:
H02M7/483; H02M7/49; H02M7/497
Domestic Patent References:
WO2010086929A12010-08-05
WO2009116273A12009-09-24
Foreign References:
JPH1189242A1999-03-30
JP2005033891A2005-02-03
JP2009165222A2009-07-23
JP2002165460A2002-06-07
Other References:
"Power Electronic Circuits", 30 November 2000, OHM-SHA, pages: 153,161 - 171
"Introduction to Power Electronics", 10 September 2006, OHM-SHA, pages: 183
"Introduction to Power Electronics", vol. 10, 10 September 2006, OHM-SHA, pages: 183
Attorney, Agent or Firm:
SAGOI, MASAYUKI (JP)
Masayuki Sunai (JP)
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Claims: